Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

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Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.
To be presented at the 5th Low Dimensional Structure and Devices, Cancun, Mexico, 12-17 December 2004. 4 pages, 4 figures

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Materials Science

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https://dspace.dare.co.zw/handle/123456789/97762

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