Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

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dc.creatorMorelhão, S. L.
dc.creatorAvanci, L. H.
dc.creatorFreitas, R.
dc.creatorQuivy, A. A.
dc.date2004-12-09
dc.date.accessioned2026-07-25T23:21:38Z
dc.descriptionPrecise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.
dc.descriptionTo be presented at the 5th Low Dimensional Structure and Devices, Cancun, Mexico, 12-17 December 2004. 4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0412254
dc.identifierhttp://arxiv.org/abs/cond-mat/0412254
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/97762
dc.subjectMaterials Science
dc.titleStrain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning
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