Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

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dc.creatorBagraev, N. T.
dc.creatorBouravleuv, A. D.
dc.creatorGehlhoff, W.
dc.creatorKlyachkin, L. E.
dc.creatorMalyarenko, A. M.
dc.creatorRomanov, V. V.
dc.creatorRykov, S. A.
dc.date2004-07-28
dc.date.accessioned2026-07-25T23:14:43Z
dc.descriptionWe present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane.
dc.description12 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0407722
dc.identifierhttp://arxiv.org/abs/cond-mat/0407722
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/96823
dc.subjectMesoscale and Nanoscale Physics
dc.subjectOther Condensed Matter
dc.titleFractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface
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