Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

Bagraev, N. T.; Bouravleuv, A. D.; Gehlhoff, W.; Klyachkin, L. E.; Malyarenko, A. M.; Romanov, V. V.; Rykov, S. A.

Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

Authors

Description

We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane.
12 pages, 9 figures