Measurements of Composite Fermion Conductivity Dependence on Carrier Density

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dc.creatorLiang, C. -T.
dc.creatorSimmons, M. Y.
dc.creatorRitchie, D. A.
dc.creatorPepper, M.
dc.date2005-03-17
dc.date.accessioned2026-07-25T15:49:25Z
dc.descriptionWe present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures. Extracting $α$ from the power law ln$(σ^{CF}_{xx}) \propto$ ln$(n_e)^α$ shows that $α\approx 1$. The measured $α \approx 1$ is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed.
dc.description6 pages, 7 figures. We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures
dc.identifierhttps://arxiv.org/abs/cond-mat/0503427
dc.identifierhttp://arxiv.org/abs/cond-mat/0503427
dc.identifierJ. Phys.: Condens. Matter 16, 1095 (2004)
dc.identifierdoi:10.1088/0953-8984/16/7/009
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/37254
dc.subjectMesoscale and Nanoscale Physics
dc.titleMeasurements of Composite Fermion Conductivity Dependence on Carrier Density
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