Josephson current in ballistic Nb/InAs/Nb highly transmissive junctions

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dc.creatorGiazotto, Francesco
dc.creatorGrove-Rasmussen, Kasper
dc.creatorFazio, Rosario
dc.creatorBeltram, Fabio
dc.creatorLinfield, Edmund H.
dc.creatorRitchie, David A.
dc.date2002-07-13
dc.date.accessioned2026-07-25T22:16:08Z
dc.descriptionHighly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.
dc.description7 pages REVTeX, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0207337
dc.identifierhttp://arxiv.org/abs/cond-mat/0207337
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/87447
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleJosephson current in ballistic Nb/InAs/Nb highly transmissive junctions
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