Phase Analysis of Thin Film Oxide Systems by AES and EELS

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dc.creatorBeshenkov, V. G.
dc.creatorMarchenko, V. A.
dc.creatorVolkov, V. T.
dc.creatorZnamenskii, A. G.
dc.date1998-12-29
dc.date.accessioned2026-07-25T16:16:05Z
dc.descriptionAuger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) in a reflection mode are compared as the methods for phase composition investigation of thin film oxide systems by ion profiling. As an example, the Al/Al2O3/Si and YBa2Cu3O7/CeO2/Al2O3 systems are considered. The adaptation of applied statistics methods for AES and EELS data treatment is discussed.
dc.description8 pages LaTex, 16 figures PostScript
dc.identifierhttps://arxiv.org/abs/cond-mat/9812411
dc.identifierhttp://arxiv.org/abs/cond-mat/9812411
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/40136
dc.subjectMaterials Science
dc.titlePhase Analysis of Thin Film Oxide Systems by AES and EELS
dc.typetext

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