Dynamic Conductance in Quantum Hall Systems

dc.creatorButtiker, M.
dc.creatorChristen, T.
dc.date1996-07-08
dc.date.accessioned2026-07-25T23:36:43Z
dc.descriptionIn the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order phase-shift between current and voltage and is associated with the displacement current. It is determined by the emittance which is a capacitance in a capacitive arrangement of edge channels but which is inductive-like if edge channels predominate which transmit charge between different reservoirs. The second-order term is associated with the charge relaxation. We apply our results to a Corbino disc and to two- and four-terminal quantum Hall bars, and we discuss the symmetry properties of the current response. In particular, we calculate the longitudinal resistance and the Hall resistance as a function of frequency.
dc.description11 pages, 2 figs. included; Contribution to the conference `The application of high magnetic fields in semiconductor physics', Wuerzburg, 28 July - 2 August. '96
dc.identifierhttps://arxiv.org/abs/cond-mat/9607051
dc.identifierhttp://arxiv.org/abs/cond-mat/9607051
dc.identifierHigh magnetic fields in the physics of semiconductors, G. Landwehr and W. Ossau (Eds.), World Scientific, Singapore, New Jersey (1997), p.193.
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/99910
dc.subjectCondensed Matter
dc.titleDynamic Conductance in Quantum Hall Systems
dc.typetext

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