Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

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dc.creatorFacer, G. R.
dc.creatorKane, B. E.
dc.creatorDzurak, A. S.
dc.creatorHeron, R. J.
dc.creatorLumpkin, N. E.
dc.creatorClark, R. G.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.date1998-05-16
dc.date1998-06-26
dc.date.accessioned2026-07-25T23:41:05Z
dc.descriptionWe report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm^2 exceed 4 E6 cm^2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.
dc.descriptionRevTeX file: 5 pages with 6 included PS/EPS files (21/5/98) Typographical error corrected 26/6/98
dc.identifierhttps://arxiv.org/abs/cond-mat/9805197
dc.identifierhttp://arxiv.org/abs/cond-mat/9805197
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/100588
dc.subjectMesoscale and Nanoscale Physics
dc.titleBallistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET
dc.typetext

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