Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

Villagonzalo, C.; Roemer, R. A.; Schreiber, M.; MacKinnon, A.

Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

Authors

Description

The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $σ$ obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent $z$ in agreement with predictions from scaling theories, we show that the temperature-dependent $σ$, the thermoelectric power $S$, the thermal conductivity $K$ and the Lorenz number $L_0$ obey scaling.
presented at the 25th International Conference on the Physics of Semiconductors, 17-22 Sept., Osaka, Japan