Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

Kravchenko, S. V.; Simonian, D.; Sarachik, M. P.

Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

Authors

Kravchenko, S. V.

Simonian, D.

Sarachik, M. P.

Description

In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition to an unexpected conducting phase in dilute high-mobility two-dimensional systems at B=0. In this Comment, we examine whether their model is supported by the available experimental data.
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