Gated nonlinear transport in organic polymer field effect transistors
| dc.creator | Hamadani, B. H. | |
| dc.creator | Natelson, D. | |
| dc.date | 2003-12-07 | |
| dc.date.accessioned | 2026-07-25T15:27:49Z | |
| dc.description | We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $μ$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime transconductance are strongly dependent on temperature, gate voltage, and source-drain voltage. As $T$ is reduced below 200 K and at high source-drain bias, we find transport becomes highly nonlinear and is very strongly modulated by the gate. We consider whether this nonlinear transport is contact limited or a bulk process by examining the length dependence of linear conduction to extract contact and channel contributions to the source-drain resistance. The results indicate that these devices are bulk-limited at room temperature, and remain so as the temperature is lowered. The nonlinear conduction is consistent with a model of Poole-Frenkel-like hopping mechanism in the space-charge limited current regime. Further analysis within this model reveals consistency with a strongly energy dependent density of (localized) valence band states, and a crossover from thermally activated to nonthermal hopping below 30 K. | |
| dc.description | 22 pages, 7 figures, accepted to J. Appl. Phys | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0312184 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0312184 | |
| dc.identifier | J. Appl. Phys. 95, 1227 (2004). | |
| dc.identifier | doi:10.1063/1.1635979 | |
| dc.identifier.uri | https://dspace.dare.co.zw/handle/123456789/34075 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Gated nonlinear transport in organic polymer field effect transistors | |
| dc.type | text |