Oscillatory screening of the dc electric field in the Si-SiO$_2$ multiple quantum wells probed by second-harmonic generation

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dc.creatorSavkin, V. V.
dc.creatorFedyanin, A. A.
dc.creatorRubtsov, A. N.
dc.creatorPudonin, F. A.
dc.creatorAktsipetrov, O. A.
dc.date1999-08-17
dc.date.accessioned2026-07-25T23:50:37Z
dc.descriptionDC-electric field, being screened in 3D semiconductors, normally decays monotonically in space. Experimental studies of the DC electric field screening in Si-SiO$_2$ multiple quantum wells by electric field induced optical second-harmonic generation show a non-monotonic, oscillatory-like decay. The model of electrons localized inside quantum wells, with the first subband occupied, allows a description of the phenomenon. Interwell Coulomb interaction, a finite value of the electron charge and strong effective-mass anisotropy result in a crucial difference from 3D Fermi liquid.
dc.descriptionsubmitted to PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/9908238
dc.identifierhttp://arxiv.org/abs/cond-mat/9908238
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/101913
dc.subjectCondensed Matter
dc.titleOscillatory screening of the dc electric field in the Si-SiO$_2$ multiple quantum wells probed by second-harmonic generation
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