Room temperature domain wall pinning in bent ferromagnetic nanowires
| dc.creator | Silevitch, D. M. | |
| dc.creator | Tanase, M. | |
| dc.creator | Chien, C. L. | |
| dc.creator | Reich, D. H. | |
| dc.date | 2003-08-27 | |
| dc.date.accessioned | 2026-07-25T15:18:57Z | |
| dc.description | Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of the domain wall acts to shift the switching fields of the nanowire. In addition, a comparison of the magnetoresistance of the nanowire with and without a domain wall shows a shift in the resistance correlated with the presence of a wall. The resistance is decreased by 20-30 milli-Ohms when a wall is present, compared to an overall resistance of 40-60 Ohms. A model of the magnetization was developed that allowed calculation of the magnetostatic energy of the nanowires, giving an estimate for the nucleation energy of a domain wall. | |
| dc.description | 11 pages, 15 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0308579 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0308579 | |
| dc.identifier.uri | https://dspace.dare.co.zw/handle/123456789/32839 | |
| dc.subject | Materials Science | |
| dc.title | Room temperature domain wall pinning in bent ferromagnetic nanowires | |
| dc.type | text |