Optical pumping NMR in the compensated semiconductor InP:Fe

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dc.creatorGoto, Atsushi
dc.creatorHashi, Kenjiro
dc.creatorShimizu, Tadashi
dc.creatorMiyabe, Ryo
dc.creatorWen, Xiaogang
dc.creatorOhki, Shinobu
dc.creatorMachida, Susumu
dc.creatorIijima, Takahiro
dc.creatorKido, Giyuu
dc.date2003-12-01
dc.date.accessioned2026-07-25T22:55:34Z
dc.descriptionThe optical pumping NMR effect in the compensated semiconductor InP:Fe has been investigated in terms of the dependences of photon energy (E_p), helicity (sigma+-), and exposure time (tau_L) of infrared lights. The {31}P and {115}In signal enhancements show large sigma+- asymmetries and anomalous oscillations as a function of E_p. We find that (i) the oscillation period as a function of E_p is similar for {31}P and {115}In and almost field independent in spite of significant reduction of the enhancement in higher fields. (ii) A characteristic time for buildup of the {31}P polarization under the light exposure shows strong E_p-dependence, but is almost independent of sigma+-. (iii) The buildup times for {31}P and {115}In are of the same order (10^3 s), although the spin-lattice relaxation times (T_1) are different by more than three orders of magnitude between them. The results are discussed in terms of (1) discrete energy spectra due to donor-acceptor pairs (DAPs) in compensated semiconductors, and (2) interplay between {31}P and dipolar ordered indium nuclei, which are optically induced.
dc.description8 pages, 6 figures, submitted to Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0312022
dc.identifierhttp://arxiv.org/abs/cond-mat/0312022
dc.identifierPhysical Review B 69, 075215 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.075215
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/93823
dc.subjectCondensed Matter
dc.titleOptical pumping NMR in the compensated semiconductor InP:Fe
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