Application of Raman Scattering to Study the Strain Distribution in SiGe Layers
| dc.creator | Pan, Zhongwei | |
| dc.creator | Chin, Richard | |
| dc.date | 1999-05-12 | |
| dc.date | 1999-06-17 | |
| dc.date.accessioned | 2026-07-25T16:20:28Z | |
| dc.description | In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488 and 457.9 nm) to detect the information of different depth of SiGe layers. The results show that the x value (about 0.50) of Si1-xGex and the strain of the films decrease from the interface between SiGe layers and Si substrates to SiGe surface. | |
| dc.description | 3 pages, 4 figures, 1 table | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9905175 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9905175 | |
| dc.identifier.uri | https://dspace.dare.co.zw/handle/123456789/40502 | |
| dc.subject | Materials Science | |
| dc.title | Application of Raman Scattering to Study the Strain Distribution in SiGe Layers | |
| dc.type | text |