Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering

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dc.creatorMalachias, A.
dc.creatorSchulli, T. U.
dc.creatorMedeiros-Ribeiro, G.
dc.creatorStoffel, M.
dc.creatorSchmidt, O. G.
dc.creatorMetzger, T. H.
dc.creatorMagalhaes-Paniago, R.
dc.date2004-11-25
dc.date.accessioned2026-07-25T23:21:03Z
dc.descriptionX-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.
dc.description13 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411642
dc.identifierhttp://arxiv.org/abs/cond-mat/0411642
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/97667
dc.subjectMaterials Science
dc.titleAtomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering
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