Conductance in multiwall carbon nanotubes and semiconductor nanowires : evidence of a universal tunneling barrier
Loading...
Date
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Description
Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the voltage dependence. This robust scaling law describes the conductance $G(V,T)$ by a single coefficient $α$. A universal behavior as a function of $α$ is found for all samples. Magnetoconductance measurements furthermore show that the conduction regime is weak localization. The observed behavior can be understood in terms of the coulomb blockade theory, providing that a unique tunnel resistance on the order of 2000 $Ω$ and a Thouless energy of about 40 meV exists for all samples.
5 pages, 3 figures
5 pages, 3 figures