Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

Simple item page
dc.creatorMortensen, Niels Asger
dc.creatorJauho, Antti-Pekka
dc.creatorFlensberg, Karsten
dc.date1999-09-02
dc.date2000-04-13
dc.date.accessioned2026-07-25T16:22:54Z
dc.descriptionWe study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double-barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double-barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.
dc.description13 pages including 3 figures. Accepted for publication in Superlattices and Microstructures
dc.identifierhttps://arxiv.org/abs/cond-mat/9909029
dc.identifierhttp://arxiv.org/abs/cond-mat/9909029
dc.identifierSuperlattice Microstr. 28, 67 (2000).
dc.identifierdoi:10.1006/spmi.2000.0890
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/40866
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleDephasing in semiconductor-superconductor structures by coupling to a voltage probe
dc.typetext

Files

Collections

arXiv