Nitrogen local electronic structure in Ga(In)AsN alloys by soft-X-ray absorption and emission: Implications for optical properties

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dc.creatorStrocov, V. N.
dc.creatorNilsson, P. O.
dc.creatorSchmitt, T.
dc.creatorAugustsson, A.
dc.creatorGridneva, L.
dc.creatorDebowska-Nilsson, D.
dc.creatorClaessen, R.
dc.creatorEgorov, A. Yu.
dc.creatorUstinov, V. M.
dc.creatorAlferov, Zh. I.
dc.date2003-03-10
dc.date2003-09-02
dc.date.accessioned2026-07-25T15:05:42Z
dc.descriptionSoft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In4N whose the electronic structure evolves towards improved efficiency. Furthermore, a k-character of some valence and conduction states, despite the random alloy nature of Ga(In)AsN, manifests itself in resonant inelastic X-ray scattering.
dc.descriptionMajor revisions (including new experimental data), 7 pages, 3 Postscript figures, accepted by Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0303163
dc.identifierhttp://arxiv.org/abs/cond-mat/0303163
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/30966
dc.subjectMaterials Science
dc.titleNitrogen local electronic structure in Ga(In)AsN alloys by soft-X-ray absorption and emission: Implications for optical properties
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