Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

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dc.creatorCoelho, Jose
dc.creatorPatriarche, Gilles
dc.creatorGlas, Frank
dc.creatorSaint-Girons, Guillaume
dc.creatorSagnes, Isabelle
dc.date2004-11-29
dc.date.accessioned2026-07-25T23:21:11Z
dc.descriptionWe account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thinGaAs layer (onwhich growthwas performed) and aGaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screwdislocations. For both samples, the nanostructures observed by transmission electronmicroscopy (TEM) and atomic forcemicroscopy are ordered by the underlyingDNobserved byTEMsince they have same dimensions andorientations as the cells of the DN.
dc.identifierhttps://arxiv.org/abs/cond-mat/0411720
dc.identifierhttp://arxiv.org/abs/cond-mat/0411720
dc.identifierJournal of Physics: Condensed Matter 16 (2004) 7941
dc.identifierdoi:10.1088/0953-8984/16/45/016
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/97690
dc.subjectMaterials Science
dc.titleLong-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
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