Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As

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dc.creatorFigielski, T.
dc.creatorWosinski, T.
dc.creatorPelya, O.
dc.creatorSadowski, J.
dc.creatorMorawski, A.
dc.creatorMakosa, A.
dc.creatorDobrowolski, W.
dc.creatorSzymczak, R.
dc.creatorWrobel, J.
dc.date2004-09-09
dc.date.accessioned2026-07-25T15:40:53Z
dc.descriptionWe studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In constricted samples, additionally, jumps of an enhanced conductance appear on the background of the negative MR, whose positions reflect the hysteresis of magnetization. We argue that they are manifestation of a suppression of WL due to the nucleation of a domain wall in the constriction
dc.description12 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409224
dc.identifierhttp://arxiv.org/abs/cond-mat/0409224
dc.identifier.urihttps://dspace.dare.co.zw/handle/123456789/36022
dc.subjectMaterials Science
dc.titleMagnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As
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